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| PD- 91873 IRFC240 HEXFET(R) Power MOSFET Die in Wafer Form D G S 200 V Size 4.0 Rds(on)=0.18 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min. 0.180 Max. 2.3V Min., 4.0V Max. 25A Max. 10A Max. 125C Max. Test Conditions VGS = 0V, ID = 100A VGS = 10V, ID = 10A VDS = VGS, ID = 250A VDS = 200V, VGS = 0V, TJ = 25C VGS = 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRF640 Cr-NiV-Ag ( 1kA-2kA-2.5kA ) 99% Al, 1% Si (0.004 mm) 0.147" x 0.201" ( 3.73mm x 5.11 mm) 125mm with 100 flat 0.375mm + / -0.020mm 01-5331 0.084 mm 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 3/23/99 |
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